In this invited lecture we presented our results in the field of silicon-oxide interfaces. Control over these interfaces is of great importance since it enables high-quality integration of oxide materials with Si platform and thus provides versatile additional functionalities to semiconductor industry. However, the ability of such control is hindered by the intense reaction of constituents. Therefore Si has to be passivized, which is normally performed by the formation of an appropriate buffer layer that is chemically stable in the oxygen rich environment, as well as structurally compatible with silicon and the oxide. By optimization of deposition conditions we were able to monitor Si surface reconstructions during PLD of Sr and SrO, which is essential for subsequent integration and was the focus of our talk.
B.04 Guest lecture
COBISS.SI-ID: 29062951With company Epcos TDK we have a two-year contract to determine conditions for pulsed-laser deposition of piezoelectric PLZT on Cu foil and single-crystalline substrates for energy storage applications. PLZT is antiferroelectric material and exhibit increased dielectric constant under elevated electric filed, which is being considered for applications state-of-the-art electronic components.
F.17 Transfer of existing technologies, know-how, methods and procedures into practice