Interfaces between oxides and silicon are of great importance since oxide materials can provide versatile additional functionalities for semiconductive industry. However, in numerous cases such integration requires high-quality growth of oxide, which is hindered by its intense reaction with the substrate. In our study pulsed laser deposition (PLD) was used to prepare a buffer layer based on ½ monolayer of strontium (Sr), which has been so far prepared successfully only using molecular beam epitaxy method. We were able to monitor surface reconstruction changes during PLD deposition of Sr with reflection high-energy electron diffraction (RHEED) and control Si surface coverage at the atomic level. Subsequently, epitaxial layer of STO was grown on as-prepared buffer and analyzed using different analytical techniques.
B.04 Guest lecture
COBISS.SI-ID: 28288295In collaboration with company Epcos TDK we investigate conditions for pulsed laser deposition of piezoelectric PLZT on Cu foil and single-crystalline substrates for energy storage applications. PLZT is antiferroelectric material and exhibit increased dielectric constant under elevated electric filed, which is being considered for applications state-of-the-art electronic components.
F.17 Transfer of existing technologies, know-how, methods and procedures into practice