We recently coordinated an industrial project for the company EPCOS OHG (Austria). The project focused on PLD growth of antiferroelectric PLZT thin films on SrTiO3 and Si substrates for energy-storage devices. Part of the study was also performed on Si substrates with diameter of 150 mm, together with company Solmates (The Netherlands) and research organization SINTEF (Norway). Research represented a feasibility study for integration of PLD production tool within EPCOS OHG facility. Since the company is one of the most important manufacturers of electronic components in Europe we gained very valuable experiences and knowledge with this collaborative project.
F.17 Transfer of existing technologies, know-how, methods and procedures into practice
COBISS.SI-ID: 30903591Dejan Klement (2011-2015) Preparation of a procedure for the integration of epitaxial STO thin films with Si by means of PLD as an alternative, more industrially acceptable manufacturing route compared to MBE. The procedure consists of effective removal of the native oxide, reconstruction and passivation of the Si surface with 1/2 ML of metallic Sr and growth of an epitaxial STO layer with a complex step-by-step procedure. Urška Gabor (2014-present) Preparation of single-phase PMN-PT epitaxial thin films on STO susbtrates with- or without an intermediate electrode layer fort he potential use in piezoelectric EH devices in 3-1 and 3-3 modes of operation, respectively. Research on the influence of the composition of the PLD targets on the stoichiometry, crystal structure and dielectric, ferroelectric and piezoelectric properties on the macroscopic and atomic scale. Tjaša Parkelj (2015-present) Research on the surfaces of the buffer layers between Si and oxides by means of various in situ analysis techniques, especially scanning tunelling microscopy (STM). Study of the local atomic structure and defects on the surface of the materials, prepared with PLD. Estimating the influence of the high-energy particles from the PLD plasma plume on the quality of the as-prepared surfaces.
D.09 Tutoring for postgraduate students
COBISS.SI-ID: 282123264In 2016 we organized a conference in Ljubljana for the COST TO-BE (Towards Oxide-Based Electronics) action. More than 110 researchers, mainly from Europe, attended the three-day conference (http://tobe2016fall.ijs.si/). The TO-BE COST Action brings together the most important research groups in Europe in the field of oxide materials, which operate on a theoretical, as well as the experimental and applicative level. The organization of the conference in Ljubljana provided us recognition, that we have become internationally renowned in the field of oxide-layer synthesis by means of PLD technique.
B.01 Organiser of a scientific meeting
COBISS.SI-ID: 286588416Interfaces between oxides and silicon are of great importance since oxide materials can provide versatile additional functionalities for semiconductive industry. However, in numerous cases such integration requires high-quality growth of oxide, which is hindered by its intense reaction with the substrate. In our study pulsed laser deposition (PLD) was used to prepare a buffer layer based on Sr and SrO, which have been so far prepared successfully only using molecular beam epitaxy method. We were able to monitor surface reconstruction changes during PLD process with reflection high-energy electron diffraction (RHEED) and control Si surface coverage at the atomic level. Subsequently, epitaxial layer of STO was grown on as-prepared buffer and analysed using different analytical techniques. ------------------------------------------------------------------------------------ Based on these and related results we have been invited to deliver one plenary presentation and four invited talks at various well-recognized international conferences worldwide.
B.04 Guest lecture
COBISS.SI-ID: 29062951Advanced Materials Department from Jožef Stefan Institute and Center of excellence in Nanoscience and Nanotechnology established a complete laboratory for pulsed laser deposition (PLD), which enables synthesis of advanced highquality thin films. The laboratory is composed of KrF excimer laser and PLD chamber with ultrahigh vacuum, in situ diagnostics, laser heating, and sputtering. PLD system is used for design and preparation of interfacial layers and for controlled growth of various oxides on silicon wafers. In 2016 we upgraded the laboratory with system for sample transfer in ultrahigh vacuum conditions to various analytical chambers for scanning tunnelling microscopy and X-ray photoemission spectroscopy. The laboratory has also a high resolution X-ray diffractometer, which is dedicated for thin film analysis.
D.02 Establishment of a research centre, laboratory, study course, association