Inversion boundaries (IBs), which are triggered by addition of dopants such as Sb2O3, SnO2 in TiO2 are the most common type of planar faults in ZnO-based ceramics. In the article structural and chemical characteristics of IBa are presented with their key role in grain growth and microstructure development of ZnO-based ceramic, which has important influence on the development of varistor ceramics. An IB-induced grain growth mechanism is discussed, which can be exploited for fine tailoring of current-voltage (I-U) characteristics of varistor ceramics in broad range of breakdown voltages from 60V/mm (coarse grained microstructure) to 350V/mm (fine grained microstructure), all with addition of Sb2O3.
COBISS.SI-ID: 25117735
Preparation of transparent conductive ZnO films on glass using method of low temperature hydrothermal synthesis at 90oC from solution of Zn-acetate and Na-citrate was studied. Growth of dense, smooth, highly (0001) oriented polycrystalline ZnO film with optical transparency of 82% and surprisingly low sheet resistance for undoped ZnO, only few 100Ωsq-1, which requires proper nucleation layer on glass, was explained by spatially confined oriented growth (SCOG) mechanism.
COBISS.SI-ID: 25764903
Synthesis of ZnO powders with different morphology was studied. Rounded particles, hexagonal plates and rods were prepared by solvothermal method. The influence of reaction parameters (pH, temperature and time) on the shape and size of the ZnO crystallites was explained and possible mechanism for their growth was proposed.
COBISS.SI-ID: 25774375