Ceramic thin films with high dielectric permittivity have been studied for different microelectronic applications, including for example thin film capacitors, sensors or actuators, or tunable microwave devices. Due to environmental concerns, lead-free materials represent an alternative to complex lead-based perovskites, mainly for piezoelectric or ferroelectric applications. The contribution addressed thin films based on selected compositions within the alkaline tantalate/niobate, and on alkaline earth titanate systems, prepared by Chemical Solution Deposition routes.
B.04 Guest lecture
COBISS.SI-ID: 22362663CaCu3Ti4O(12) thin films were deposited on Pt/Si by chemical solution deposition. The solution precursors were synthesized using calcium- and copper nitrate, and titanium n-butoxide in 2-methoxyethanol, spin-coated onto the substrate and heated in the temperature range from 650 oC to 850 oC. The films crystallized in perovskite phase at 750oC. The dielectric permittivity could be tuned from about 100 to 800 depending on the implementation of a nucleation layer in the process of crystallization.
B.03 Paper at an international scientific conference
COBISS.SI-ID: 22005287