Self-organized patterning may be an alternative way for manufacturing nanostructures. Ion beam irradiation of the material induces formation of ripples with wavelenghts of the order 1 - 100 nm. Controlled growth of these nanostractures can be achieved through appropriate choice of the ion beam parameters and material properties. Self-organized structures may lead to a technology capable of preparing large area low cost well ordered nanostructures. This could e.g. lead to superior optoelectronic and magnetic data storage materials.
B.03 Paper at an international scientific conference
COBISS.SI-ID: 676778Thickness of the thin oxide layer of several tens of nm was measured directly from HR SEM image of the cross section. Sample in sample holder was mounted onto the sample stage of the Auger spectroscopy apparatus equipped with a fixed ion gun. Simple depth profilings at well defined ion beam parameters were performed until substrate was reached for different incidence angles. Total sputtering time in each case is inversely proportional to the sputtering rate. A sample holder with tilted upper surface was manufactured to make virtually all incidence angles from 0 to 90° available.
B.03 Paper at an international scientific conference
COBISS.SI-ID: 704682