Self-organized patterning may be an alternative way for manufacturing nanostructures. Ion beam irradiation of the material induces formation of ripples with wavelenghts of the order 1 - 100 nm. Controlled growth of these nanostractures can be achieved through appropriate choice of the ion beam parameters and material properties. Self-organized structures may lead to a technology capable of preparing large area low cost well ordered nanostructures. This could e.g. lead to superior optoelectronic and magnetic data storage materials.
B.03 Paper at an international scientific conference
COBISS.SI-ID: 676778Thickness of the thin oxide layer of several tens of nm was measured directly from HR SEM image of the cross section. Sample in sample holder was mounted onto the sample stage of the Auger spectroscopy apparatus equipped with a fixed ion gun. Simple depth profilings at well defined ion beam parameters were performed until substrate was reached for different incidence angles. Total sputtering time in each case is inversely proportional to the sputtering rate. A sample holder with tilted upper surface was manufactured to make virtually all incidence angles from 0 to 90° available.
B.03 Paper at an international scientific conference
COBISS.SI-ID: 704682Polished FeSi alloy with added Se were etched by Ar+ at different parameters to obtain a complete set of experimental data on ion induced morphology changes. Larger areas were characterized by SEM while AFM was used for morphology details. Surface exhibits grain-orientation dependant patterns, from well-defined ripple structures to terraces, pits, or pyramidal shapes. Dimensions of these structures are of the order of a few 100 nm. Instead of regular ripple like patterns, characteristic of amorphous materials, faceted formations, due to the presence of Se, were observed.
B.03 Paper at an international scientific conference
COBISS.SI-ID: 736426The role of ion beam parameters (energy, dose, angle of incidence) on the formation of periodic self-organized nanostructures was explored.Electron Bacscattered Diffraction (EBSD) was used to determine the role of grain orientation on the resulting nanostructure. Auger Electron spectroscopy (AES) was used for the determination of surface active element and its role on the pattern formation
B.03 Paper at an international scientific conference
COBISS.SI-ID: 764586It was attempted to correlate the ion-beam induced segregation with crystal orientation and the initial composition. Two sets of FeSiAl alloys were used , of very similar composition, but for the amount of surface active elements (P, S, Se). The specimens were etched by Ar+ and the surface compositional changes were checked for by means of AES and XPS. Ion beam induced segregation of S and S-Fe bonding in the surface layer was found to take place. Some prefferential sputtering was also observed.
B.03 Paper at an international scientific conference
COBISS.SI-ID: 811946