Etching characteristics and properties of {110} silicon crystal planes used as 45° optical mirrors for deflecting optical beams from/to optical fibers were investigated in this paper. The results of optical characterization of passive mirrors with 632 nm incident light show reduced scattering of reflected optical beam due to improved microroughness for mirrors made by TMAH-Triton. The article improves understanding, design and realization of microstructures.
COBISS.SI-ID: 4688724
It was shown that by a proper combination of thin film layers, stress can be reduced without drastically changing the stoichiometry of the thin films. A combination of 560nm SiO2/750nm SiN and 560nm SiO2/70nm Si3N4 had a residual stress of 480MPa and -107MPa, respectively. The results apply also to other applications where similar thin film depositions are taking part in realization of silicon 3D microstructures.
COBISS.SI-ID: 4953428
Authors proved that at high electric fields, the Poole-Frenkel effect and thermally-assisted tunneling give rise to an enhanced electrical conductivity of a-Si. The occupancy of states in the gap, free and trapped charge carrier concentrations and electric conductivity of a homogenous a-Si in steady-state conditions were calculated on the basis of space-charge neutrality and with time unchangeable concentrations of charge carriers. The theory of capture-emission dynamics in a-Si at high fields was further extended by expressing occupancy functions and nonequilibrium quasi-Fermi levels.
COBISS.SI-ID: 4457556
A modular design of system for calibration of smart pressure sensors using digital signal conditioner is presented. Measured quantity stabilization algorithms, which use direct readout from sensor ASIC are presented. A novel approach to calibration of analog output sensor stage and novel digital temperature compensation methods are presented. A concept of adaptive calibration system was designed and implemented.
COBISS.SI-ID: 5672788
In our work, Ti/Ni/Ag stack was applied as a silicon backside metallization scheme. Investigation of adhesion failure was performed on samples where metal stacked layers were delaminated. It is shown that beside the chemical preparation of the Si surface prior to sputtering also thermal annealing of sputtered metal structure has strong influence on the adhesion of sputtered layers to the silicon. Measured high tensile residual stress, particularly in sputtered Ni layer (1.4-2 MPa) is found to reduce the metal stack adhesion.
COBISS.SI-ID: 21313319