Projects / Programmes
Raziskava reakcij na površinah in notranjih faznih mejah (Slovene)
| Code |
Science |
Field |
Subfield |
| 2.09.00 |
Engineering sciences and technologies |
Electronic components and technologies |
|
| Code |
Science |
Field |
| T150 |
Technological sciences |
Material technology |
| T155 |
Technological sciences |
Coatings and surface treatment |
Surfaces, interfaces, thin-films, diffusion, surface analysis methods, AES , SPEM, XPS, TEM, plasma, sol-gel synthesis, contact surfaces
Researchers (11)
| no. |
Code |
Name and surname |
Research area |
Role |
Period |
No. of publicationsNo. of publications |
| 1. |
08028 |
Miha Kocmur |
|
Researcher |
1998 - 2001 |
0 |
| 2. |
01703 |
Lidija Koller |
Electronic components and technologies |
Researcher |
1999 - 2001 |
0 |
| 3. |
15703 |
PhD Janez Kovač |
Electronic components and technologies |
Researcher |
1996 - 2001 |
0 |
| 4. |
10429 |
PhD Miran Mozetič |
Electronic components and technologies |
Researcher |
1998 - 2001 |
0 |
| 5. |
03066 |
PhD Vincenc Nemanič |
Electronic components and technologies |
Researcher |
1999 - 2001 |
0 |
| 6. |
09105 |
Borut Praček |
Electronic components and technologies |
Researcher |
1998 - 2001 |
0 |
| 7. |
10497 |
MSc Sonja Spruk |
Electronic components and technologies |
Researcher |
1998 - 2001 |
0 |
| 8. |
17622 |
Janez Trtnik |
|
Researcher |
1998 - 2001 |
0 |
| 9. |
20048 |
PhD Alenka Vesel |
Electronic components and technologies |
Researcher |
1996 - 2001 |
0 |
| 10. |
01741 |
PhD Anton Zalar |
Electronic components and technologies |
Head |
1999 - 2001 |
0 |
| 11. |
03366 |
Marko Žumer |
Electronic components and technologies |
Researcher |
1996 - 2001 |
0 |
Abstract
The early-stage interfacial reactions between amorphous Al2O3 and crystalline Ti, Ti3Al and TiAl thin films were studied by means of Auger electron spectroscopy (AES) depth profiling. The heating of the Al2O3/Ti and Al2O3/Ti3Al bilayers induced the diffusion of O and Al into the Ti and Ti3Al layers. The beginning of the interdiffusion was observed at about 425oC for both layers. No chemical reaction could be found at the Al2O3/TiAl interface, although this sample was heated up to the final temperature of 700oC. A strong influence of the thin-film thickness on the kinetics of the reaction in the Al2O3/Ti bilayers was observed.
The formation and evolution of different phases on Ni/Si(111) system were studied by scanning photoelectron microscopy (SPEM) at the Synchrotron of Trieste. The samples with different phases on surfaces were prepared: (Sqrt(3) x Sqrt(3)), (1x1), NiSi and NiSi2 islands. The different phases were attributed to the different mass transport mechanisms of Ni and Si. Investigation of Ni/SiOx/Si structure showed that diffusion of the metal through the oxide barrier occured at local imperfections in the this layer.
Different model and industrial samples were treated in hydrogen plasma and we found that the power dissipated on the surface during plasma treatment depended on the state of the surface. The temperature of the samples changed simultaneously as soon as the surface layers of plasma treated samples changed their composition.
Thin films of tin oxide, doped with europium or terbium, were deposited by sol-gel dip-coating method. The layers were 150 nm thick, homogenous and became crystalline after 8 hours of heating at 500 °C. The results of EXAFS structural analysis showed that the local surrounding of europium ions in amorphous silica host is composed of seven oxygen atoms at the distance of 0,23 nm.
Processes of outgassing and high frequency plasma cleaning of thin films on the surface of Ag contact materials (AgNi 0,15, AgNi 10, AgCdO 10) and some polymer materials (Crastin, Lexan, Araldit, Ultramid) for elements in professional electronics were studied.
